Low pressure drop canister for fixed bed scrubber applications and method of using same

ABSTRACT

An apparatus and method for abating toxic and/or hazardous gas species in a diluent gas stream line deriving from a by-pass line of a semiconductor process tool, comprising contacting the diluent gas stream with a dry resin sorbent material having an affinity for the toxic and/or hazardous gas species to effect the removal of at least a portion of the toxic and/or hazardous gas species by a chemisorbent or physisorbent reaction between the sorbent bed and the toxic gas component effectively reduces the concentration of the toxic gas component in the process diluent stream to below TLV.

This application is a continuation of and claims priority to U.S. patentapplication Ser. No. 11/014,643 filed Dec. 16, 2004, which is adivisional of U.S. patent application Ser. No. 10/249,506 filed Apr. 15,2003, issued as U.S. Pat. No. 6,843,830, which is hereby incorporated byreference herein in its entirety.

BACKGROUND

Embodiments described relate to dry resin sorbent systems in a by-passline of a semiconductor process tool useful for reducing toxic and/orhazardous gaseous components deriving therefrom.

BACKGROUND OF THE RELATED ART

Typical and emerging semiconductor Epitaxial (EPI) processes use toxicand/or hazardous source gases such as arsine (AsH₃), phosphine (PH₃),germane (GeH₄) and diborane (B₂H₆) for deposition of hetero-epitaxialthin films. Many of these processes are equipped with point-of use (POU)water scrubbers, which are designed to abate specific gases used in suchprocesses, such as dichlorosilane (SiH₂Cl₂). However, wet scrubbers areineffective at abating many hydride gases such as AsH₃ and PH₃. If apoint-of-use water scrubber is used, the unabated hydride gases may bereleased to the roof, where they can be further re-entrained into thesemiconductor facility through make up air fans.

These toxic and/or hazardous gases are typically diluted with hydrogenwhen fed to EPI reactors, many of which continuously by-pass some ofthat gas to “equalize” pressure/flow to the reactor. By such design,during deposition, only a small amount of hydride gas flows to thereactor, while a much larger amount bypasses the chamber and goesdirectly to vent. The by-pass can go to outside air directly or to a POUabatement system on the EPI reactor.

Many EPI processes feed hydride gases in ppm levels and mass flowcontrollers are typically used to control their flow. The hydride gasmay be used in combination with diluents and/or are combined therewithin a mixing manifold up-stream of a mass-flow controller. Pressure inthe manifold is maintained at a constant level by pressure controllers,transducers etc.

It is plausible to use a thermal oxidizer in the bypass line to reducethe occurrence of hydride gas components being released to theenvironment or ventilation system. However, if the hydride gas componentin the bypass line is, for example, arsine, arsenic-containing waste isgenerated, which must be handled and treated carefully as arsenic ishighly toxic. Further, a high cost of ownership is associated withthermal oxidizers, particularly in the area of fuel consumption.

Alternatively a combination thermal/wet scrubber may be used in thebypass line to reduce the occurrence of hydride gas components beingreleased to the environment or ventilation system. However, if arsenicis present in the by-pass line, arsenic-containing by-products willbecome entrained in the wastewater. The arsenic-contaminated water ishighly controlled in certain areas of the United States and will likelyrequire further treatment prior to disposal. Moreover, initial costs ofsuch a system start in a six-digit dollar range and maintenance andoperational costs are predicted to start in a five-digit dollar range.

Therefore, it is one objective of the present invention, to provide aninexpensive solution to controlling the release of hazardous and/ortoxic gas components from a bypass line upstream of a semiconductorprocess tool.

It is a further objective of the present invention to provide aninexpensive solution to controlling the release of hazardous and/ortoxic gas components from a point-of-use water scrubber.

SUMMARY OF THE INVENTION

The present invention provides a by-pass abatement system and processfor removing pollutants from a by-pass effluent gaseous stream, which ispreferably derived from a semiconductor process tool.

In one aspect, the present invention relates to an abatement apparatusand system for use in a by-pass process line originating from asemiconductor process.

In a further aspect, the invention relates to an abatement apparatus,comprising a sorbent-based scrubber, which when joined in fluid flowcommunication with an effluent gas stream comprising a hazardouscomponent, reduces the concentration of the hazardous component in theeffluent gas stream.

In a still further aspect, the present invention relates to apoint-of-use scrubber for treating a toxic and/or hazardous component inan effluent waste stream deriving from a by-pass line of a semiconductorprocess tool, said scrubber comprising a canister having:

an inlet in gas flow communication with the process tool's bypass line;

an outlet; and

a sorbent bed therebetween;

wherein said sorbent bed contacts the toxic and/or hazardous componentin the effluent waste stream to effectively reduce the concentrationtherein of the toxic and/or hazardous component.

In a still further aspect, the present invention relates to an abatementapparatus for reducing the concentration of a toxic and/or hazardouscomponent, in a by-pass line of an epitaxial deposition reactor, theapparatus comprising an up-flow canister.

In a further aspect the present invention, relates to a point-of-use,scrubber for treating an effluent waste stream comprising a toxic and/orhazardous component, said waste stream deriving from a by-pass line of asemiconductor process, said scrubber comprising:

an up-flow canister comprising:

-   -   a lower section plenum space;    -   an upper section plenum space;    -   at least one dry resin sorbent bed layer therebetween    -   an inlet in gas flow communication with the by-pass process        line; and    -   an outlet,        arranged such that the process effluent waste stream flows in an        upward direction to effectively reduce the concentration of the        toxic/and or hazardous component from the effluent waste stream.

In a further aspect the present invention, relates to a process forreducing the concentration of a toxic and/or hazardous component in adiluent waste stream deriving from a by-pass line of semiconductorprocess tool, said process comprising, contacting the diluent gas streamwith a dry resin sorbent material having an affinity for the toxicand/or hazardous component, to effect the removal of at least a portionof the toxic and/or hazardous component by a chemisorbent orphysisorbent reaction between the sorbent material and the toxic gascomponent in the process diluent waste stream to below TLV.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic representation of a typical epitaxialdeposition system according to one embodiment of the present invention.

FIG. 2 shows a schematic representation of a by-pass abatement systemaccording to one embodiment of the present invention.

FIG. 3 shows a schematic representation of a bypass abatement systemaccording to a further embodiment of the instant invention.

FIG. 4 shows a schematic representation of a bypass abatement systemaccording to a further embodiment of the instant invention.

FIG. 5 shows a schematic representation of a bypass abatement systemaccording to a further embodiment of the instant invention.

FIG. 6 shows a schematic representation of a bypass abatement systemaccording to a further embodiment of the instant invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention provides a by-pass abatement system and processfor removing pollutants from a by-pass effluent gaseous stream, which ispreferably derived from a semiconductor process tool.

The invention comprises a scrubber in a by-pass line of a semiconductorprocess tool, where prior to such invention, a toxic gas componenthaving been diluted by a diluent gas had been by-passed from the processtool for discharge to atmosphere, house-exhaust or other dispositionsteps.

The scrubber accommodates the collection of toxic and/or hazardous gascomponents in a diluent by-pass stream, typically considered pollutants,by contacting the diluent gas stream with a sorbent bed material, whichmay be fixed or fluidized and may work by physical adsorption orirreversible chemisorption.

Preferably the sorbent bed comprises a dry resin sorbent materialarranged in a canister, such that by-pass effluent enters a headspace(plenum space) above or below the bed prior to contact with the sorbentmaterial. In order to provide headspace below the bed, a support may beinserted into the canister to support the sorbent bed. Preferablyeffluent enters the canister at a cross-sectional center at a bed inlet(the cross-section being transverse to the flow direction of the gasstream being flowed through the bed).

The canister having any shape or size useful for treating a by-passeffluent stream comprising a toxic and/or hazardous component, providesfor flow of the by-pass effluent stream into the canister and throughthe sorbent bed in either an upward or a downward direction, in avertically upstanding canister. In a preferred embodiment, the canisteris of an up-flow design having a cylindrical or cubic geometry and avolume that is between 0.1 to 1000 liters. In a more preferredembodiment, the canister volume is between 4 and 50 liters.

The cubic container may be adapted to minimize volumetric spacerequirements in storage, transport and use. In one specific embodiment,the abatement system includes a cubic up-flow canister having at leastupper and lower plenum spaces and a sorbent bed section therebetween.

As used herein the terms “cube and “cubic” are interchangeable and aredefined as having three dimensions and six faces, where the anglebetween any two adjacent faces is a right angle.

The up-flow canister as used herein is more fully described inco-pending, commonly assigned, U.S. patent application Ser. No.10/370,159 having a filing date of Feb. 19, 2003, for Low Pressure propCanister for Fixed Bed Scrubber Applications and Method of Using Same,in the names of Paul J. Marganski, Theodore A. Shreve, Joseph Sweeney,Jose Arno, Mark Holst, and Karl Olander, and is incorporated herein byreference in its entirety.

The up-flow canister design counteracts any flow distribution problemsthat otherwise may occur in the flow of gas through the sorbent bed.Preferably, the up-flow canister comprises:

a lower section plenum space;

a center section space, for containment of a sorbent bed material;

an upper section plenum space;

an inlet in gas flow communication with the semiconductor processeffluent stream, comprising means for introducing the process effluentstream to the lower section plenum space; and

an outlet comprising means for egress of the process effluent streamfrom the canister.

The lower section plenum space, upper section plenum space and sorbentbed section, may each occupy any percent of the interior section of thecanister and may be readily determined by one skilled in the art.Variables affecting the volume occupied by each of the three sectionsinclude but are not limited to process, volumes of toxic component to beabated, resin choice, effluent fluid flow, canister shape, inlet designetc.

As used herein, the by-pass abatement system and process are intended tobe broadly construed, and may alternatively comprise, consist, orconsist essentially of the specific stated components hereafterspecifically identified. Although exemplary embodiments describeparticular aspects, any changes, modifications, and substitutions may bemade without departing from the spirit and scope of these embodiments.

In some prior art systems, diluent mass flow controller vented to thePOU water scrubber, during deposition, which was typically ineffectivein trapping and abating the toxic hydride component.

The canister of the abatement system may couple to a semiconductorprocess tool in a by-pass line in upstream or downstream relationship toa house or other POU scrubber system or the canister may couple to theby-pass line as a stand-alone abatement system dedicated to theabatement of toxic and/or hazardous component in the by-pass line. In apreferred embodiment, the by-pass abatement system employing a dry resinsorbent bed in an up-flow or down-flow canister, is either stand-aloneor upstream of a house or POU abatement system and serves to prevent therelease to atmosphere or house-exhaust, of toxic and/or hazardousgaseous components in a process effluent stream, not trapped by theprimary abatement system.

Preferably, the by-pass abatement system targets a diluent mass flowcontroller (MFC) in a process gas manifold, having incorporated therein,a bypass line for exhaust of excess process diluent gas from the processmanifold. The by-pass line may be coupled to a POU or house abatementsystem, atmosphere, vent or a roof of a semiconductor facility.

When the excess process diluent gas contains toxic gas components, andthe by-pass line of the gas manifold exhausts the excess process diluentto atmosphere, vent or a roof of a semiconductor facility, the potentialis present, for the toxic gas component to enter the environment ordepending on environmental conditions, for the exhausted process gasesto become entrained in the air up-take system.

Furthermore, when the excess process diluent stream contains a toxic gascomponent such as arsine, phosphine, germane, etc., a point-of-use orhouse abatement system does not sufficiently control the release of thetoxic component to atmosphere, a vent or a roof of a semiconductorfacility.

In typical EPI process tools, a mixing manifold upstream of the tool isused to combine diluent and doping gas, for example hydrogen and arsinerespectively. Dopant gas typically flows to the mixing manifold througha first mass flow controller at rates of between 0-300 sccm and diluenttypically flows through a second and separate mass flow controller atrates between 0-30 SLM. Between 80 to 99% of the resulting diluenthydride stream is by-passed from the system. Accordingly, in a preferredembodiment, the abatement system of the instant invention targets aby-pass line in the mixing manifold, upstream of the mixing manifoldmass flow controller of an EPI process tool.

In a further embodiment, the abatement apparatus of the presentinvention, comprises an up-flow canister, housing a sorbent bed materialcomprising at least one metal oxide and more preferably a mixture of atleast two metal oxides.

Advantageously, the instant invention provides an inexpensive solutionto the release of unabated toxic gas component from an EPI process, bytargeting the diluent flow rather than the total exhaust gas flow. Theinexpensive benefits of the by-pass abatement system include but are notlimited to its zero foot-print requirements and low maintenancerequirements, as the system, may be mounted above a process tool inexhaust duct work, has no moving parts and generates only small amountsof toxic waste for disposal. Additionally, there are no adverseconditions occurring in the EPI process due to the operation of such asystem.

The incorporation of an abatement system, using a dry resin sorbent bed,having an affinity for toxic gas components such as arsine, phosphine,germane, etc., into the by-pass line of a process manifold, controls therelease of the toxic gas components to atmosphere, vent or the roof of asemiconductor facility. Advantageously, the instant invention controlsthe exhaustion of toxic and/or hazardous gaseous components, originatingfrom a by-pass line of a diluent gas manifold of a semiconductorprocess.

FIG. 1 shows a typical Prior Art epitaxial deposition system and process100, comprising dopant gas source 102 and diluent gas source 104 coupledto process line 106 through mixing manifold 108. A dopant hydride gascomponent such as PH₃, AsH₃, GeH₄, etc. and diluent gas such ashydrogen, flow to mixing manifold 108, in a predetermined ratio, throughsource delivery line 110 and diluent delivery line 112, where the dopantand diluent gases mix to form a diluent process effluent. Mass flowcontroller 114, downstream of mixing manifold 108, controls the flow ofdiluent process effluent to epitaxial deposition chamber 116. When,pressure controller 118, in the mixing manifold, exceeds a predeterminedpressure, excess diluent process effluent flows into bypass line 120,through vent valve 126, to either atmosphere 124, or a point-of-use wetscrubber system or other house abatement system 122 and then toatmosphere 124. Effluent waste stream from epitaxial deposition chamber116 flows through line 132 to point-of-use wet scrubber unit 122 usefulfor abating process acid gases such as HCl, SiH₂Cl₂ and SiHCl₃,originating from source 128. When process conditions include toxicand/or hazardous hydride gases originating from manifold 108, the toxichydride gas component enters the atmosphere unabated, from bothdeposition chamber 116 and bypass line 120 by way of vents 124 and 138respectively.

FIGS. 2-5 show the epitaxial deposition system of FIG. 1, havinginstalled therein a by-pass scrubber according to further embodiments ofthe present invention. In describing such embodiments, with respect toFIGS. 2-5, like numerals will be used in accordance with FIG. 1 toidentify similar features.

FIG. 2 depicts an epitaxial deposition system employing a point-of-useby-pass scrubber 134 coupled to bypass line 120. In such a system, massflow controller 114, downstream of mixing manifold 108, controls theflow of diluent process effluent to epitaxial deposition chamber 116.When, pressure controller 118, in the mixing manifold, exceeds apredetermined pressure, excess diluent process effluent comprising atoxic gas component, flows into bypass line 120, through vent valve 126,to by-pass, up-flow canister 134, where a sorbent bed material, housedtherein, contacts a toxic gas component, and a chemisorbent orphysisorbent reaction between the sorbent bed material and the toxic gascomponent effectively reduces the concentration of the toxic gascomponent in the process diluent stream to below TLV. Accordingly, aneffluent waste stream having a reduced concentration of toxic gascomponent is exhausted from scrubber 134, to environment, or for furtherdisposition in exhaust line 124.

FIG. 3 depicts a system where excess diluent process effluent comprisingtoxic gas component, flows into bypass line 120, through vent valve 126,to by-pass, up-flow canister 134, where a sorbent bed material, housedtherein, contacts the toxic gas component and reacts to chemisorb orphysisorb thereon at least a portion of the toxic gas componentoriginating from the diluent mass flow controller 114. A resultingeffluent stream having a reduced concentration of at least one toxic gascomponent exits canister 134 and flows through valve 142 to point-of-useabatement system (for example wet scrubber) 122, for further treatmentand disposition 138.

FIG. 4 depicts a system where process fluid comprising a toxic gascomponent is exhausted from epitaxial deposition reactor 116, intoprocess exhaust line 132 to point-of-use scrubber system 122, where awet or thermal reaction effects the removal of at least a portion of thetoxic gas component. The resulting effluent waste stream is exhaustedfrom system 122 in effluent waste stream line 138 through valve 126 andinto up-flow canister 134 where a chemisorbent or physisorbent reactionbetween a sorbent bed housed therein, and the toxic gas component in theeffluent waste stream effectively reduces the concentration of at leastone toxic component unabated by the main scrubber system 122.Accordingly, such a system provides for a polisher for scrubbing aneffluent waste stream after a main or house abatement system has failedto remove at least a portion of toxic gas component from the effluentwaste stream, said polisher comprising an up-flow canister havingdisposed therein a dry resin sorbent bed.

FIG. 5 depicts a system similar to that described hereinabove for FIG.2, except for further inclusion of epi-reactor by-pass line 144, whichprovides for an alternative scrubber system for effluent waste streamderiving from reactor 116. Such a system provides for switchover from amain abatement system 122 to a by-pass scrubber system 134, by way ofvalves 142 and 126. Such a system enables switchover from a mainscrubber 122, to a by-pass system 134, for more efficient effluenttreatment as well as a back up in the event the main abatement system istaken off-line.

The dry-resin sorbent, abatement system of the instant invention, isuseful for removing up to 99% of diluted hydride gas component in abypass line of an epitaxial deposition process tool, and when the dryresin sorbent system is placed downstream of a point-of-use wetscrubber, which serves as a main abatement system for a particularsemiconductor process tool, the instant invention, aids in the removalof toxic gas component unabated by the wet abatement system. Thus theinstant invention obviates the potential release of hazardous and toxicgas components to a ventilation system and/or to the environment.

In a further embodiment, the present invention is directed to a processfor reducing the concentration of at least one toxic and/or hazardouscomponent in an effluent waste stream deriving from a by-pass line of asemiconductor process tool, comprising contacting the toxic and/orhazardous component with a dry resin sorbent material that is reactivewith the toxic and/or hazardous component to substantially reduce theconcentration of the toxic and/or hazardous component in the effluentstream. Preferably the toxic and or hazardous component is a hydride gasand the hydride gas component reacts with the dry resin sorbent materialby chemisorption and/or physisorption to reduce the concentration in theeffluent stream, of the hydride gas component.

By targeting the diluent mass flow controller, EPI process gases, suchas, SiH₂Cl₂ and SiHCl₃, which are effectively controlled using wet andthermal oxidation systems pass to a thermal, wet or other point-of-useabatement system for treatment, while the diluent process linecomprising from 80-99% of diluted hydride dopant gases for dischargefrom the system upstream of the process tool, has coupled thereto, anabatement system, comprising a dry resin sorbent bed, for controllingthe release of toxic and hazardous hydride gases in a bypass line thatare sent to a point-of-use or house scrubber system comprising a wetabatement system having little to no affect at scrubbing hydride dopantgases.

FIG. 6 shows a bypass abatement system 200, according to one embodimentof the present invention. Diluent process effluent stream comprising atoxic gas component, originating from mixing manifold 210, upstream frommass flow controller 202 and process tool 230, flows in bypass line 204,through valve 206, and inlet 210, into lower section plenum space 212 ofcanister 214, where the effluent stream mixes and expands, until theprocess effluent is mass transported into a first sorbent bed section216, in an up-flow direction, by a pressure differential induced byfluid motive force device, such as an eductor or venturi 218. The toxicgas component contacts sorbent material 216, and the sorbent material,having an affinity for the toxic gas component retains thereon and/orreacts therewith, by chemisorption or physisorption at least a portionof the toxic gas component, in an evenly distributed manner, therebycreating a uniform fluid front or mass transfer zone (MTZ), whichtheoretically transfers evenly through the sorbent bed material.

The effluent stream having a reduced concentration of toxic gascomponent exits the sorbent bed section 216 and flows into an optionalsecond plenum space 228, where the effluent stream, again mixes andexpands, until the process effluent is mass transported into an optionalsecond sorbent bed section 232, in an up-flow direction, by the pressuredifferential induced by the fluid motive force device 218. Toxic gascomponent not chemisorbed or physisorbed by first sorbent bed section216, contacts sorbent bed section 232 and second sorbent bed section232, retains thereon and/or reacts therewith, by chemisorption orphysisorption, at least a second portion of toxic gas component, in anevenly distributed manner.

The effluent stream having a reduced concentration of toxic gascomponent, exits second sorbent bed section where it again mixes andexpands until exhaustion through outlet port 222 where the effluentstream passes to environment, further treatment or other dispositionsteps.

Canister 214 may employ gas flow distributor elements (not shown) toeffect a central efflux of gas for distribution across the entirecross-section of the container, to provide uniform flow withoutoccurrence of hydrodynamic anomalies, such as dead space, bypassing,etc.

Various ancillaries are usefully employed with the scrubber system asdescribed hereinabove including but not limited to end point monitoring,pressure and temperature sensing. Such ancillaries be linked in signaltransmission relationship with a computer or other automatic processcontrol means, for enabling automation responsiveness to various systemparameters.

Referring again to FIG. 6, an end point monitor 224, such as a toxic gassensor, may be coupled to an output module for outputting an indicationof breakthrough of the contaminant(s) in the effluent gas stream whenthe capacity of the scrubber bed for active processing of the effluentgas stream is exhausted or reaches a predetermined approach toexhaustion (e.g., reaches a point of exhaustion of 95% of the totalcapacity of the dry scrubber material).

Optionally, a pressure sensing device 234 and/or 220, to monitor thepressure at the canister inlet and/or outlet respectively, may becoupled to an output module for outputting an indication of pressure forincreasing or decreasing the energy input on the downstream fluid motiveforce device or to signal a blockage in the sorbent bed or scrubberinlet.

A thermal monitoring device 226, may be coupled to an output module foroutputting an indication of temperature within the canister and sorbentbed(s). In this respect, a number of thermal monitoring devices, e.g.,thermocouples, temperature probes, pyroelectric devices, etc., may beemployed along the length of the bed in the direction of gas flowtherethrough.

Advantageously, the instant invention provides an inexpensive solutionto the potential release of toxic hydride gases to a semiconductorfacility and/or environment. The inexpensive benefits of the system arein part due to the small footprint of the system and in further part dueto the low maintenance required for such a system as there are no movingparts and only small amounts of toxic waste are generated for disposal.Additionally, there are no adverse conditions occurring at the CVDprocess due to the operation of such a system.

In a specific illustrative embodiment, a dry scrubber container may beemployed, utilizing an up-flow design and operation, with centeredup-flow of gas at the bed inlet. Additionally, a heat exchange coil inthe bed arranged for maintaining bed temperature at a desiredtemperature level.

The sorbent material used in the up-flow canister of the presentinvention may react with contaminants in an effluent stream (adsorbate)by physical or chemical adsorption kinetics. Physical adsorption is dueto intermolecular forces between an adsorbent and adsorbate (e.g. vander Waals interactions) and thus is reversible. Chemical adsorptioninvolves a chemical reaction between the adsorbent and the adsorbate.Preferably the up-flow canister of the present invention utilizes a dryscrubbing medium having a chemisorption relationship with processcontaminants. Various options are usefully employed with the scrubbersystem as described hereinabove including but not limited to end pointmonitoring, pressure and temperature sensing.

The system of the instant invention, preferably utilizes a dry resinsorbent material for trapping by chemisorption or physisorption reactiontoxic gas components in a by-pass diluent waste stream. The dry resinsorbent material may comprise any combination of resins useful forscrubbing process gases specific to the particular process toolrequiring effluent abatement and may be readily determined by those ofskill in the art. Sorbent bed materials include but are not limited to:carbon, CuSO₄, Cu(OH₂), CuO, CuCO₃, CuCO₃.Cu(OH)₂, CU₂O, MnO_(x),wherein x is from 1 to 2 inclusive, AgO, Ag₂O, CoO, CO₃O₄, Cr₂O₃, CrO₃,MoO₂, MoO₃, TiO₂, NiO, LiOH, Ca(OH)₂, CaO, NaOH, KOH, Fe₂O₃, ZnO, Al₂O₃,K₂CO₃, KHCO₃, Na₂CO₃, NaHCO₃, NH₃OH, Sr(OH)₂, HCOONa, BaOH, KMnO₄, SiO₂,ZnO, MgO, Mg(OH)₂, Na₂O₃S₂, SiO₂, triethylenediamine (TEDA) and mixturesthereof. Preferably, the dry resin sorbent material of the instantinvention comprises at least one of CuSO₄, Cu(OH₂), CuO, CuCO₃,CuCO₃.Cu(OH)₂, Cu₂O, MnO_(x), wherein x is from 1 to 2 inclusive,Ca(OH)₂, and CaO.

Additionally, the sorbent material may further comprise a stabilizer orthe active component may be impregnated into or coated onto an adsorbentsubstrate. Stabilizing materials help in the manufacturing of thesorbent media (e.g. in extrusion), and in some situations serves toprevent the sorbent media from decomposing. Useful stabilizers includebut are not limited to the elements Be, Mg, transition metals selectedfrom V, Mo, Co, Ni, Cu, Zn, B, Al, Si, Pb, Sb, Bi and oxides, hydroxideshydrogen carbonates, hydrogen sulfates, hydrogen phosphates, sulfides,peroxides, halides, carboxylates, and oxy acids thereof.

The instant invention as it relates to a by-pass abatement system andassociated process for removing toxic and/or hazardous hydride gascomponents from a process effluent waste stream deriving from a by-passline of a mixing manifold of an Epitaxial deposition process tool, inone embodiment comprises an up-flow or down-flow canister housingtherein a dry resin sorbent bed material comprising a metal oxide. Themetal oxide sorbent material having an affinity for metal hydridesreacts therewith to substantially remove the hydride species from theeffluent waste stream, until the capacity of the dry scrubber materialfor hydride species is at least partially exhausted.

To at least partially regain the capacity of the dry resin sorbentmaterial for the hydride species, the instant invention may furthercomprise means to contact the at least partially exhausted capacity dryresin sorbent material with an oxidant effective to regenerate the dryscrubber material subsequent to diminution of hydride removal capacitythereof, as more fully described in U.S. patent application Ser. No.09/717,439, filed Nov. 21, 2000, now issued as U.S. Pat. No. 6,491,884the disclosure of which, is hereby incorporated herein in its entirety.The oxidant may be joined in oxidant supply relationship to the bed ofdry resin sorbent material such that flow circuitry is arranged to flowoxidant in contact with the bed of sorbent material. Preferably, theflow circuitry is arranged to repetitively and alternatingly flow adiluent gas hydride-containing waste effluent stream followed byoxidation regeneration of the sorbent bed material.

Accordingly, while the invention has been described herein withreference to specific features and illustrative embodiments, it will berecognized that the utility of the invention is not thus limited, butrather extends to and encompasses other features, modifications andalternative embodiments as will readily suggest themselves to those ofordinary skill in the art based on the disclosure and illustrativeteachings herein. The claims that follow are therefore to be construedand interpreted as including all such features, modifications andalternative embodiments within their spirit and scope.

1. A point-of-use scrubber for treating a toxic and/or hazardouscomponent in an effluent waste stream deriving from a by-pass line of asemiconductor process tool, said scrubber comprising a canister having:an inlet in gas flow communication with the process tool's bypass line;an outlet; and a sorbent bed therebetween; wherein said sorbent bedcontacts the toxic and/or hazardous component in the effluent wastestream to effectively reduce the concentration therein of the toxicand/or hazardous component.
 2. The scrubber of claim 1, wherein saidcanister is of an up-flow design.
 3. The scrubber of claim 1, whereinsaid canister is of a cubic geometry.
 4. The scrubber of claim 1,wherein said canister has a volume that is between 0.1 to 1000 liters.5. The scrubber of claim 1, wherein said canister has a volume that isbetween 4 and 50 liters.
 6. The scrubber of claim 1, having a zerofootprint.
 7. The scrubber of claim 1, wherein said canister is of anup-flow design and of a cubic geometry.
 8. The scrubber of claim 2,wherein said up-flow canister further comprises at least a lower plenumspace section and an upper plenum space section.
 9. The scrubber ofclaim 8, wherein said sorbent bed resides in a section that is betweensaid lower and upper plenum space sections.
 10. The scrubber of claim 8,wherein said lower plenum space section is in gas flow communicationwith said canister inlet.
 11. The scrubber of claim 8, wherein saidupper plenum space is in gas flow communication with said canisteroutlet.
 12. The scrubber of claim 1, wherein said by-pass line comprisesa mass flow controller.
 13. The scrubber of claim 12, wherein said massflow controller is upstream of said semiconductor process tool.
 14. Thescrubber of claim 1, wherein said by-pass line is coupled to at leastone of: a point-of-use house abatement system, atmosphere, a vent and aroof of a semiconductor facility.
 15. The scrubber of claim 1, whereinsaid toxic and/or hazardous component is selected from the groupconsisting of arsine, phosphine and germane.
 16. The scrubber of claim1, wherein said effluent waste stream further comprises a diluent gas.17. The scrubber of claim 1, wherein said sorbent bed is of a dry resinmaterial.
 18. The scrubber of claim 17, wherein said dry resin materialcomprises at least one metal oxide.
 19. The scrubber of claim 17,wherein said dry resin material comprises at least one componentselected from the group consisting of: carbon, CuSO₄, Cu(OH₂), CuO,CuCO₃, CuCO₃.Cu(OH)₂, Cu₂O, MnO_(x), wherein x is from 1 to 2 inclusive,AgO, Ag₂O, CoO, CO₃O₄, Cr₂O₃, CrO₃, MoO₂, MoO₃, TiO₂, NiO, LiOH,Ca(OH)₂, CaO, NaOH, KOH, Fe₂O₃, ZnO, Al₂O₃, K₂CO₃, KHCO₃, Na₂CO₃,NaHCO₃, NH₃OH, Sr(OH)₂, HCOONa, BaOH, KMnO₄, SiO₂, ZnO, MgO, Mg(OH)₂,Na₂O₃S₂, SiO₂, triethylenediamine (TEDA) and mixtures thereof.
 20. Thescrubber of claim 17, wherein said dry resin material comprises at leastone component selected from the group consisting of: CuSO₄, Cu(OH₂),CuO, CuCO₃, CuCO₃.Cu(OH)₂, Cu₂O, MnO_(x), wherein x is from 1 to 2inclusive, Ca(OH)₂, and CaO.
 21. The scrubber of claim 1, furthercomprising at least one of: an end point monitor, a pressure sensor anda temperature sensor.
 22. An abatement apparatus for reducing theconcentration of a toxic and/or hazardous component, in a by-pass lineof an epitaxial deposition reactor, the apparatus comprising an up-flowcanister.
 23. A point-of-use, scrubber for treating an effluent wastestream comprising a toxic and/or hazardous component, said waste streamderiving from a by-pass line of a semiconductor process, said scrubbercomprising: an up-flow canister comprising: a lower section plenumspace; an upper section plenum space; at least one dry resin sorbent bedlayer therebetween an inlet in gas flow communication with the by-passprocess line; and an outlet, arranged such that the process effluentwaste stream flows in an upward direction to effectively reduce theconcentration of the toxic/and or hazardous component from the effluentwaste stream.
 24. A process for reducing the concentration of a toxicand/or hazardous component in a diluent waste stream deriving from aby-pass line of semiconductor process tool, said process comprising,contacting the diluent gas stream with a dry resin sorbent materialhaving an affinity for the toxic and/or hazardous component, to effectthe removal of at least a portion of the toxic and/or hazardouscomponent by a chemisorbent or physisorbent reaction between the sorbentmaterial and the toxic gas component in the process diluent waste streamto below TLV.